Alternative N precursors and Mg doped GaN grown by MOVPE
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منابع مشابه
Alternative N precursors and Mg doped GaN grown by MOVPE
In this paper, we address two different aspects relevant to the growth of GaN. The first part concerns alternative nitrogen source whereas in the second part, we report experimental results on Mg doping. Several nitrogen precursors have been used for the growth of GaN in MOVPE. To produce active species from N2 or NH3, a remote Plasma Enhanced Chemical Vapour Deposition (RPECVD) process has bee...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1996
ISSN: 1092-5783
DOI: 10.1557/s1092578300001897